Properties of Al Doped ZnO Thin Film Prepared by Simple Casting Process

Authors

  • M. Pochai College of Nanotechnology, King Mongkut’s Institute of Technology Ladkrabang, Bangkok, 10520 Thailand
  • P. Songkeaw College of Nanotechnology, King Mongkut’s Institute of Technology Ladkrabang, Bangkok, 10520 Thailand
  • K. Onlaor College of Nanotechnology, King Mongkut’s Institute of Technology Ladkrabang, Bangkok, 10520 Thailand
  • T. Thiwawong College of Nanotechnology, King Mongkut’s Institute of Technology Ladkrabang, Bangkok, 10520 Thailand
  • B. Tunhoo College of Nanotechnology, King Mongkut’s Institute of Technology Ladkrabang, Bangkok, 10520 Thailand

Keywords:

Zinc Oxide, Al dopant, Thin Film

Abstract

Aluminum doped zinc oxide (AZO) thin films were prepared by a simple doctor blade technique. A solution of zinc acetate mixed with aluminum chloride was used as precursor, which was casted on the glass substrate. The influences of annealing temperature on properties of the films were evaluated by X-ray diffraction, scanning electron microscope, UV-visible spectrophotometer and four point probe technique. The electrical conductivity and optical energy band gap of AZO films had been increased when Al concentration increased, due to the effect of the atom of Al dopant in the ZnO films.

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Published

2018-06-29

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Section

Articles