Structural, morphological and photoluminescence properties of Gaand F-doped ZnO nanorod-structured films grown by hydrothermal process on ZnO sol-gel derived seeding films

Authors

  • O. Tanomkiat Energy Technology and Management Faculty of Science Energy and Environment, King Mongkut’s University of Technology North Bangkok Rayong Campus, 21120, Thailand
  • A. Kiewrugsa Department of Applied Physics, Faculty of Science and Technology, Rajabhat Rajanagarindra University, Chachoengsao 24000, Thailand
  • A. Sungthong Department of Applied Physics, Faculty of Science and Technology, Rajabhat Rajanagarindra University, Chachoengsao 24000, Thailand
  • K. Chongsri Department of Applied Physics, Faculty of Science and Technology, Rajabhat Rajanagarindra University, Chachoengsao 24000, Thailand

Keywords:

Nanorod, Ga-doped ZnO, F-doped ZnO

Abstract

In this work, structural and morphological properties of ZnO, Ga-doped ZnO, and F-doped ZnO nanorod-structured (NRS) films grown by the hydrothermal process were extensively investigated. Undoped ZnO, 5% Ga-doped ZnO and 5% F-doped ZnO nanorod-structured films were fabricated on sol-gel derived ZnO seeding layer by one-step hydrothermal process operated at 90 ºC for 2 hours using zinc nitrate hexahydrate, gallium (III) nitrate hydrate, and ammonium fluoride as Zn, Ga and F source, respectively. The corresponding SEM results indicated that both Ga and F dopants played significant roles in morphological properties of grown nanorod structures such as preferential orientation, shape, and size. The photoluminescence (PL) spectroscopy at room temperature and low temperature was conducted in order to investigate the effect of both dopants on luminescence properties of ZnO-based NRS. The corresponding PL spectra exhibited stronger yellow-orange emission intensity of the F-doped NRS implying greater oxygen vacancy defects of ZnO lattice induced by F dopant.

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Published

2020-06-30

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Articles